Cleaning formulation for removing residues on surfaces

ABSTRACT

This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; and 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of and claims priority to U.S. application Ser. No. 17/749,316, filed on May 20, 2022, which is a continuation of and claims priority to U.S. application Ser. No. 17/582,077, filed on Jan. 24, 2022, now U.S. Pat. No. 11,401,487, which is a continuation of and claims priority to U.S. application Ser. No. 16/998,352, filed on Aug. 20, 2020, now U.S. Pat. No. 11,286,444, which is a continuation of and claims priority to U.S. application Ser. No. 16/361,637, filed on Mar. 22, 2019, now U.S. Pat. No. 10,927,329, which is a continuation of and claims priority to U.S. application Ser. No. 15/386,178, filed on Dec. 21, 2016, now U.S. Pat. No. 10,253,282, which is a continuation of and claims priority to U.S. application Ser. No. 14/558,767, filed on Dec. 3, 2014, now U.S. Pat. No. 9,562,211, which claims priority to U.S. Provisional Application Ser. No. 61/936,999, filed on Feb. 7, 2014, and U.S. Provisional Application Ser. No. 61/912,697, filed on Dec. 6, 2013. The contents of the prior applications are hereby incorporated by reference in their entirety.

BACKGROUND 1. Field of the Disclosure

The present disclosure relates to a novel cleaning composition for semiconductor substrates and a method of cleaning semiconductor substrates. More particularly, the present disclosure relates to a cleaning composition for removing plasma etch residues formed on semiconductor substrates after plasma etching of metal layers or dielectric material layers deposited on the substrates and the removal of residues left on the substrates after bulk resist removal via a plasma ashing process.

2. Discussion of the Background Art

In the manufacture of integrated circuit devices, photoresists are used as an intermediate mask for transferring the original mask pattern of a reticle onto the wafer substrate by means of a series of photolithography and plasma etching steps. One of the essential steps in the integrated circuit device manufacturing process is the removal of the patterned photoresist films from the wafer substrate. In general, this step is carried out by one of two methods.

One method involves a wet stripping step in which the photoresist-covered substrate is brought into contact with a photoresist stripper solution that consists primarily of an organic solvent and an amine. However, stripper solutions cannot completely and reliably remove the photoresist films, especially if the photoresist films have been exposed to UV radiation and plasma treatments during fabrication. Some photoresist films become highly crosslinked by such treatments and are more difficult to dissolve in the stripper solution. In addition, the chemicals used in these conventional wet-stripping methods are sometimes ineffective for removing inorganic or organometallic residual materials formed during the plasma etching of metal or oxide layers with halogen-containing gases.

An alternative method of removing a photoresist film involves exposing a photoresist-coated wafer to oxygen-based plasma in order to burn the resist film from the substrate in a process known as plasma ashing. However, plasma ashing is also not fully effective in removing the plasma etching by-products noted above. Instead, removal of these plasma etch by-products is typically accomplished by subsequently exposing the processed metal and dielectric thin films to certain cleaning solutions.

Metal substrates are generally susceptible to corrosion. For example, substrates such as aluminum, copper, aluminum-copper alloy, tungsten nitride, tungsten (W), cobalt (Co), titanium oxide, other metals and metal nitrides, will readily corrode and dielectrics [ILD, ULK] can etch by using conventional cleaning chemistries. In addition the amount of corrosion tolerated by the integrated circuit device manufacturers is getting smaller and smaller as the device geometries shrink.

At the same time as residues become harder to remove and corrosion must be controlled to ever lower levels, cleaning solutions must be safe to use and environmentally friendly.

Therefore, the cleaning solution should be effective for removing the plasma etch and plasma ash residues and must also be non-corrosive to all exposed substrate materials.

SUMMARY OF THE DISCLOSURE

The present disclosure is directed to a non-corrosive cleaning composition that is useful primarily for removing residues (e.g., plasma etch and/or plasma ashing residues) from a semiconductor substrate as an intermediate step in a multistep manufacturing process. These residues include a range of relatively insoluble mixtures of organic compounds like residual photoresist, organometallic compounds, metal oxides which are formed as reaction by-products from exposed metals such as aluminum, aluminum/copper alloy, copper, titanium, tantalum, tungsten, cobalt, metal nitrides such as titanium and tungsten nitrides, and other materials. An advantage of the cleaning composition described herein is that it can clean a broad range of residues encountered and be generally non-corrosive to exposed substrate materials (e.g., exposed metals such as aluminum, aluminum/copper alloy, copper, titanium, tantalum, tungsten, cobalt, and metal nitrides such as titanium and tungsten nitrides).

In one aspect, the present disclosure features a cleaning composition containing 1) at least one redox agent, 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid, 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups, 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole, 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers, 6) water, and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. In some embodiments, the pH of the cleaning composition is between about 6 and about 11 (e.g., between about 6 and about 9.5). In some embodiments, the cleaning composition is a uniform solution.

For example, the cleaning composition can include:

1) about 0.5% to about 20% by weight of at least one redox agent;

2) about 0.01% to about 1% by weight of at least one first chelating agent;

3) about 0.01% to about 1.8% by weight of at least one second chelating agent;

4) about 0.05% to about 1% by weight of at least one metal corrosion inhibitor;

5) about 1% to about 30% by weight of at least one organic solvent;

6) about 78% to about 98% water, and

7) optionally, at least one pH adjusting agent.

The present disclosure is also directed to a method of cleaning residues from a semiconductor substrate. The method includes contacting a semiconductor substrate containing post etch residues and/or post ash residues with a cleaning composition described herein. For example, the method can include the steps of:

-   -   (A) providing a semiconductor substrate containing post etch         and/or post ash residues;     -   (B) contacting said semiconductor substrate with a cleaning         composition described herein;     -   (C) rinsing said semiconductor substrate with a suitable rinse         solvent; and     -   (D) optionally, drying said semiconductor substrate by any means         that removes the rinse solvent and does not compromise the         integrity of said semiconductor substrate.

DETAILED DESCRIPTION OF THE DISCLOSURE

As defined herein, unless otherwise noted, all percentages expressed should be understood to be percentages by weight to the total weight of the cleaning composition. Unless otherwise noted, ambient temperature is defined to be between about 16 and about 27 degrees Celsius (° C.).

As defined herein, a “water-soluble” substance (e.g., a water-soluble alcohol, ketone, ester, or ether) refers to a substance having a solubility of at least 5% by weight in water at 25° C.

One embodiment of the present disclosure is directed to a non-corrosive cleaning composition comprising:

-   -   1) about 0.5% to about 20% by weight of at least one redox         agent;     -   2) about 0.01% to about 1% by weight of at least one first         chelating agent, the first chelating agent being a         polyaminopolycarboxylic acid;     -   3) about 0.01% to about 1.8% by weight of at least one second         chelating agent different from the first chelating agent, the         second chelating agent containing at least two         nitrogen-containing groups,     -   4) about 0.05% to about 1% by weight of at least one metal         corrosion inhibitor selected from the group consisting of         substituted and unsubstituted benzotriazoles;     -   5) about 1% to about 30% by weight of at least one organic         solvent selected from the group consisting of water soluble         alcohols, water soluble ketones, water soluble esters, and water         soluble ethers;     -   6) about 78% to about 98% water, and     -   7) optionally, at least one pH adjusting agent, the pH adjusting         agent being a base free of a metal ion and adjusting the pH of         the cleaning composition to between about 6 and about 9.5.

The compositions of this disclosure contain at least one redox agent, which aids in the dissolution of residues on the semiconductor surface such as photoresist residues, metal residues, and metal oxide residues. As used herein, the term “redox agent” refers to a compound that can induce an oxidation and a reduction in a semiconductor cleaning process. An example of a suitable redox agent is hydroxylamine. In some embodiments, the redox agent does not include a peroxide (e.g., hydrogen peroxide).

In some embodiments, the compositions of this disclosure include at least about 0.5% by weight (e.g., at least about 1% by weight, at least about 2% by weight, at least about 3% by weight, or at least about 5% by weight) and/or at most about 20% by weight (e.g., at most about 17% by weight, at most about 15% by weight, at most about 12% by weight, or at most about 10% by weight) of the redox agent.

The compositions of this disclosure contain at least one first chelating agent, which can be a polyaminopolycarboxylic acid. For the purposes of this disclosure, a polyaminopolycarboxylic acid refers to a compound with a plurality of amino groups and a plurality of carboxylic acid groups. Suitable classes of polyaminopolycarboxylic acid chelating agents include, but are not limited to mono- or polyalkylene polyamine polycarboxylic acids, polyaminoalkane polycarboxylic acids, polyaminoalkanol polycarboxylic acids, and hydroxyalkylether polyamine polycarboxylic acids.

Suitable polyaminopolycarboxylic acid chelating agents include, but are not limited to, butylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid (DTPA), ethylenediaminetetrapropionic acid, triethylenetetraminehexaacetic acid, 1,3-diamino-2-hydroxypropane-N,N,N′,N′-tetraacetic acid, propylenediaminetetraacetic acid, ethylenediaminetetraacetic acid (EDTA), trans-1,2-diaminocyclohexane tetraacetic acid, ethylendiamine diacetic acid, ethylendiamine dipropionic acid, 1,6-hexamethylene-diamine-N,N,N′,N′-tetraacetic acid, N,N-bis(2-hydroxybenzyl)ethylenediamine-N,N-diacetic acid, diaminopropane tetraacetic acid, 1,4,7,10-tetraazacyclododecane-tetraacetic acid, diaminopropanol tetraacetic acid, and (hydroxyethyl)ethylene-diaminetriacetic acid.

In some embodiments, the compositions of this disclosure include at least about 0.01% by weight (e.g., at least about 0.1% by weight, at least about 0.2% by weight or at least about 0.3% by weight) and/or at most about 1% by weight (e.g., at most about 0.7% by weight, at most about 0.6% by weight or at most about 0.5% by weight) of the polyaminopolycarboxylic acid chelating agent.

In general, the compositions of this disclosure can contain at least one second chelating agent having at least 2 nitrogen containing groups (e.g., nitrogen containing groups with chelating ability). Examples of suitable nitrogen containing groups include primary amino, secondary amino, imidazolyl, triazolyl, benzotriazolyl, piperazinyl, pyrolyl, pyrrolidinyl, pyrazolyl, piperidinyl, guanidinyl, biguanidinyl, carbazatyl, hydrazidyl, semicarbazidyl, and aminoguanidinyl. Compounds with combinations of any two or more of these groups are contemplated. The second chelating agent having at least 2 nitrogen containing groups may be added as the compound itself, or as its neutralized salt. In some embodiments, the second chelating agent is optional in the compositions of this disclosure.

For the purposes of this disclosure, the polyaminopolycarboxylic acids are excluded from the second chelating agent. In other words, the second chelating agent is different from the first chelating agent. However, in some embodiments, the second chelating agent may include one or more carboxylic acid groups.

For example, the second chelating agent can be a monocarboxylic acid compound containing a primary or secondary amino group and at least one additional nitrogen-containing basic group. For the purpose of this disclosure, the required primary or secondary amino group is not directly bonded to nor part of the additional nitrogen containing basic group (e.g. NH₂, H₂NC(═X), or H₂NNHC(═X), where X=O, S, or NR, R being H or C₁-C₄ alkyl). In other words, NH₂NH—, H₂NC(═X)NH—, or H₂NNHC(═X)NH— are not considered the primary or secondary amino group within this disclosure. Thus, a monocarboxylic acid containing such a basic group only (e.g., NH₂NH—, H₂NC(═X)NH—, or H₂NNHC(═X)NH—) does not include a primary or secondary amino group and is therefore excluded from the monocarboxylic acid compound containing a primary or secondary amino group and at least one additional nitrogen-containing basic group described in this disclosure. Examples of such excluded monocarboxylic acids include guanidinoacetic acid and 4-guanidinobutyric acid.

Suitable classes of monocarboxylic acid compound containing a primary or secondary amino group and at least one additional nitrogen-containing basic group are those monocarboxylic acid compounds which contain a primary or secondary amino group and at least one of the following nitrogen-containing basic groups selected from the group consisting of imidazolyl, triazolyl, benzotriazolyl, piperazinyl, pyrolyl, pyrrolidinyl, pyrazolyl, piperidinyl, guanidinyl, carbazatyl, hydrazidyl, semicarbazidyl, aminoguanidinyl, primary amino (e.g., C₁-C₁₀ primary amino), and secondary amino (e.g., C₁-C₁₀ secondary amino). These groups may be further substituted with substituents, e.g. lower alkyl groups, except for the secondary amino group.

In some embodiments of the disclosure, the at least one monocarboxylic acid compound containing a primary or secondary amino group and at least one additional nitrogen-containing basic group is selected from the compounds described by the generic Structure (I): (R³NH)C(R¹)(R²)CO₂H  (I), in which each of R¹ and R², independently, is a hydrogen atom, C₁-C₄ alkyl, or a group (e.g., a C₁-C₁₀ group) having at least one nitrogen-containing basic group; and R³ is a hydrogen atom, C₁-C₁₀ alkyl, or a group (e.g., a C₁-C₁₀ group) having at least one nitrogen-containing basic group; in which at least one of R¹, R², and R³ is a group having at least one nitrogen-containing basic group.

In some embodiments, R¹ can be a group having at least one nitrogen-containing basic group, in which the group having at least one nitrogen-containing basic group is C₁-C₁₀ alkyl substituted by amino, guanidinyl, or imidazolyl and optionally further substituted by OH. In such embodiments, R² can be H or C₁-C₁₀ alkyl and R³ can be H, C₁-C₁₀ alkyl, or a group having at least one nitrogen-containing basic group, in which the group having at least one nitrogen-containing basic group is C₁-C₁₀ alkyl optionally substituted by amino, guanidinyl, or imidazolyl and optionally further substituted by OH.

In some embodiments, R³ can be a group having at least one nitrogen-containing basic group, in which the group having at least one nitrogen-containing basic group is C₁-C₁₀ alkyl substituted by amino, guanidinyl, or imidazolyl and optionally further substituted by OH. In such embodiments, each of R¹ and R², independently, can be H or C₁-C₄ alkyl.

In some embodiments of the disclosure, the at least one monocarboxylic acid compound containing a primary or secondary amino group and at least one additional nitrogen-containing basic group is selected from the compounds of Structure (1) described above, where R¹ is a group having at least one nitrogen-containing basic group and each of R² and R³ is a hydrogen atom. Examples of compounds having this structure include, but are not limited to, lysine, 2,3-diaminobutyric acid, 2,4-diaminobutyric acid, omithine, 2,3-diaminopropionic acid, 2,6-diaminoheptanoic acid, 4-methyl lysine, 3-methyl lysine, 5-hydroxylysine, 3-methyl-L-arginine, arginine, homoarginine, N⁵-monomethyl-L-arginine, N⁵-[imino(methylamino)methyl]-D-omithine, canavanine, and histidine.

In some embodiments of the disclosure, the at least one monocarboxylic acid compound containing a primary or secondary amino group and at least one additional nitrogen-containing basic group is selected from the compounds described by Structure (I) described above, where each of R¹ and R² is a hydrogen atom, and R³ is a C₁-C₁₀ group containing a group having at least one nitrogen-containing basic group. Examples of compounds having this structure include, but are not limited to, N-(2-aminoethyl)glycine and N-(2-aminopropyl)glycine.

In some embodiments of the disclosure, the at least one monocarboxylic acid compound containing a primary or secondary amino group and at least one additional nitrogen-containing basic group is selected from the compounds described by Structure (I) described above, where R¹ is a group having at least one nitrogen-containing basic group, R² is a hydrogen atom, and R³ is a C₁-C₁₀ alkyl group. Examples of compounds having this structure include, but are not limited to, N2-methyl lysine, and N2-methyl-L-Arginine.

In some embodiments of the disclosure, the at least one monocarboxylic acid compound containing a primary or secondary amino group and at least one additional nitrogen-containing basic group is selected from the monocarboxylic acid compounds described by Structure (I) described above, where R¹ is a group having at least one nitrogen-containing basic group, R² is a hydrogen atom, and R³ is a group having at least one nitrogen-containing basic group. Examples of compounds having this structure includes, but are not limited to, N²-(2-aminoethyl)-D-arginine, and N²-(2-aminoethyl)-L-arginine.

In some embodiments of the disclosure, the at least one monocarboxylic acid compound containing a primary or secondary amino group and at least one additional nitrogen-containing basic group is selected from the monocarboxylic acid compounds described by Structure (I) described above, where R¹ is a C₁-C₄ alkyl, R² is a group having at least one nitrogen-containing basic group, and R³ is a hydrogen atom. Examples of compounds having this structure include, but are not limited to, 2-methyllysine and 2-methyl-L-arginine.

In some embodiments of the disclosure, the at least one monocarboxylic acid compound containing a primary or secondary amino group and at least one additional nitrogen-containing basic group is selected from the monocarboxylic acid compounds that have a structure where the required primary or secondary amino group is not bonded to the same carbon as the carboxyl group. Examples of compounds having this structure include, but are not limited to, 3,4-diaminobutyric acid and 3-amino-5-[(aminoiminomethyl)methylamino] pentanoic acid.

In some embodiments, the second chelating agent can include biguanide groups. For example, the second chelating agent can have the following Structure (II):

in which R¹⁰, R¹¹, R¹², and R¹³ are independently selected from the group consisting of hydrogen. substituted or unsubstituted aryl, substituted or unsubstituted C₃-C₁₀ cyclic alkyl, and substituted or unsubstituted C₁-C₁₀ linear or branched alkyl; and R¹⁴ is hydrogen or a single bond that together with R¹³ forms an imidazole ring; provided that at least one of R¹⁰, R¹¹, R¹², and R¹³ is an aryl group or contains an aryl substituent and that at least two of R¹⁰, R¹¹, R¹², and R¹³ are hydrogen. In some embodiments, R¹¹ and R¹³ are hydrogen. In some embodiments, R¹³ and R¹⁴ are hydrogen.

Examples of suitable aryl groups for R¹⁰-R¹³ include, but are not limited to phenyl, napthyl, and anthracenyl. Suitable substituents include, but are not limited to halogen (e.g., Cl, Br, or F), C₁-C₁₀ linear or branched alkyl, C₃-C₁₀ cyclic alkyl, C₁-C₁₀ linear or branched alkoxy, C₃-C₁₀ cyclic alkoxy, nitro, SH, dioxolyl, and substituted or unsubstituted phenyl.

Examples of suitable substituted or unsubstituted C₃-C₁₀ cyclic alkyl for R¹⁰-R¹³ include, but are not limited to cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, and bicyclic systems such as norbornyl and fully hydrogenated naphthylene. Suitable substituents included, but are not limited to, halogen (e.g., Cl, Br, or F), C₁-C₁₀ linear or branched alkyl, C₃-C₁₀ cyclic alkyl, and substituted or unsubstituted phenyl.

Examples of suitable substituted or unsubstituted C₁-C₁₀ linear or branched alkyl for R¹⁰-R¹³ include, but are not limited to, methyl, ethyl, propyl, butyl, pentyl, hexyl, octyl, iso-propyl, iso-butyl, t-butyl, 1,1,2,2-tetramethylpropyl, and decyl. Suitable substituents include, but are not limited to, halogen (e.g., Cl, Br, or F), C₁-C₁₀ linear or branched alkoxy, C₁-C₁₀ linear or branched fluoroalkoxy, C₃-C₁₀ cyclic alkoxy, and substituted or unsubstituted aryl.

Examples of biguanides having a substituted or unsubstituted aryl include, but are not limited to, 1-phenylbiguanide, 1-(o-tolyl)biguanide, 1-(3-methylphenyl)biguanide, 1-(4-methylphenyl)biguanide, 1-(2-chlorophenyl)biguanide, 1-(4-chlorophenyl)biguanide, 1-(2,3-dimethylphenyl)biguanide, 1-(2,6-dimethylphenyl)biguanide, 1-(1-naphthyl)biguanide, 1-(4-methoxyphenyl)biguanide, 1-(4-nitrophenyl)biguanide, 1,1-diphenylbiguanide, 1,5-diphenylbiguanide, 1,5-bis(4-chlorophenyl)biguanide, 1,5-bis(3-chlorophenyl)biguanide, 1-(4-chloro)phenyl-5-(4-methoxy)phenylbiguanide, 1,1-bis(3-chloro-4-methoxyphenyl)biguanide, 1,5-bis(3,4-dichlorophenyl)biguanide, 1,5-bis(3,5-dichlorophenyl)biguanide, 1,5-bis(4-bromophenyl)biguanide.

Examples of biguanides having a substituted or unsubstituted aryl group and a substituted or unsubstituted C₁-C₁₀ linear or branched alkyl group include, but are not limited to, 1-phenyl-1-methylbiguanide, 1-(4-chlorophenyl)-5-(1-methylethyl)biguanide (Proguanil), 1-(3,4-dichlorophenyl)-5-(1-methylethyl)biguanide, 1-(4-methylphenyl)-5-octylbiguanide, 1-(4-chlorophenyl)-2-(N′-propan-2-ylcarbamimidoyl) guanidine, ditolylbiguanide, dinaphthylbiguanide, and dibenzylbiguanide.

Examples of biguanides having a substituted or substituted C₁-C₁₀ linear or branched alkyl include, but are not limited to, 4-chlorobenzhydryl biguanide, 1-benzo[1,3]dioxol-5-ylmethylbiguanide, 1-benzyl-5-(pyridine-3-yl)methylbiguanide, 1-benzylbiguanide, 4-chlorobenzylbiguanide, 1-(2-phenylethyl)biguanide, 1-hexyl-5-benzyl biguanide, 1,1-dibenzylbiguanide, 1,5-dibenzylbiguanide, 1-(phenethyl)-5-propylbiguanide, and 1,5-bis(phenethyl)biguanide.

Examples of biguanides having a substituted or unsubstituted C₃-C₁₀ cyclic alkyl include, but are not limited to, 1-cyclohexyl-5-phenylbiguanide, 1-(4-phenylcyclohexyl)biguanide, 1-(4-methyl)cyclohexyl-5-phenylbiguanide, and 1-cyclopentyl-5-(4-methoxyphenyl)biguanide, norbornylbiguanide, dinorbornylbiguanide, adamantylbiguanide, diadamantylbiguanide, dicyclohexylbiguanide.

Examples of Structure (II) where R¹⁴ is a single bond that together with R¹³ forms an imidazole ring, include but are not limited to, 2-guanidinobenzimidazole, 5-methyl-2-guanidinobenzimidazole, 4,6-dimethyl-2-guanidinobenzimidazole, 5,6-dimethyl-2-guanidinobenzimidazole, 5-chloro-2-guanidinobenzimidazole, 4,5-dichloro-2-guanidinobenzimidazole, 4,6-dichloro-2-guanidinobenzimidazole, 5-bromo-2-guanidinobenzimidazole, 5-phenyl-2-guanidinobenzimidazole, and 5-methoxy-2-guanidinobenzimidazole.

In some embodiments, the second chelating agent contains multiple biguanide groups. In some embodiments, the second chelating agent contains two biguanide groups. These second chelating agents are referred to herein as bisbiguanides or dibiguanides. In some embodiments, the second chelating agent containing multiple biguanide groups is a polymeric biguanide. Polymeric biguanides contemplated include polymers wherein the biguanide moiety is contained within the backbone of the polymer, as well as polymers containing pendant biguanide moieties.

An example of the second chelating agent containing two biguanide groups is a compound of Structure (Ill):

in which R²⁰, R²¹, R²², and R²³ are independently selected from the group consisting of hydrogen, substituted or unsubstituted aryl, substituted or unsubstituted C₃-C₁₀ cyclic alkyl, and substituted or unsubstituted C₁-C₁₀ linear or branched alkyl; each R²⁴ is independently selected from the group consisting of hydrogen, substituted or unsubstituted aryl, substituted or unsubstituted phenylethyl, or substituted or unsubstituted benzyl alkyl; and m is an integer from 1 to 10; provided that at least one of R²⁰, R²¹, R²², R²³ and R²⁴ is an aryl group or contains an aryl substituent and that at least two of R²⁰, R²¹, R²², and R²³ are hydrogen.

Examples of bisbiguanides of Structure (Ill) include, but are not limited to, ethylenedibiguanide, propylenedibiguanide, tetramethylenedibiguanide, pentamethylenedibiguanide, hexamethylenedibiguanide, heptamethylenedibiguanide, octamethylenedibiguanide, 1,6-bis-(4-chlorobenzylbiguanido)-hexane (Fluorhexidine(R)), 1,1′-hexamethylene bis(5-(p-chlorophenyl)biguanide) (chlorhexidine), 2-(benzyloxymethyl)pentane-1,5-bis(5-hexylbiguanide), 2-(phenylthiomethyl)pentane-1,5-bis(5-phenethylbiguanide), 3-(phenylthio)hexane-1,6-bis(5-hexylbiguanide), 3-(phenylthio)hexane-1,6-bis(5-cyclohexylbiguanide), 3-(benzylthio)hexane-1,6-bis(5-hexylbiguanide), and 3-(benzylthio)hexane-1,6-bis(5-cyclohexylbiguanide).

In one embodiment, the second chelating agent is a bisbiguanide having

This bisbiguanide is also known as alexidine.

In some embodiments, the second chelating agent containing two biguanide groups include, but are not limited to, phenylenyldibiguanide, naphthylenyldibiguanide, pyridinyldibiguanide, piperazinyldibiguanide, phthalyldibiguanide, 1,1′-[4-(dodecyloxy)-m-phenylene]bisbiguanide, 2-(decylthiomethyl)pentane-1,5-bis(5-isopropylbiguanide), and 2-(decylthiomethyl)pentane-1,5-bis(5,5-diethylbiguanide).

In some embodiments, the second chelating agent containing multiple biguanide groups is a polymeric biguanide. Exemplary polymeric biguanides contemplated as a component of the compositions described herein have the Structure (IV):

-   -   in which n is an integer of at least 2; each R²⁵, independently,         is H or C₁-C₆ alkyl; and each R²⁸, independently is optionally         substituted C₁-C₂₀ alkylene (e.g., C₄-C₁₀ alkylene).

As used herein, “alkylene” refers to a divalent organic radical. Examples of divalent alkylene moieties include, but are not limited to, —CH₂—, —CH₂CH₂—, —CH₂CH₂CH₂—, —CH₂CH₂CH₂CH₂—, —CH₂CH₂CH₂CH₂CH₂—, —CH₂CH₂CH₂CH₂CH₂CH₂—, and the like. In some embodiments, R²⁶ is —CH₂CH₂CH₂CH₂CH₂CH₂—.

In some embodiments, the C₁-C₂₀ alkylene is optionally substituted. Suitable substituents include, but are not limited to, C₁-C₁₀ linear or branched alkyl, C₃-C₁₀ cyclic alkyl, substituted or unsubstituted phenyl, C₁-C₁₀ linear or branched alkoxy, C₃-C₁₀ cyclic alkoxy, nitro, hydroxyl, SH, halogen, amino, dioxolyl, biguanidyl, cyano, carboxyl, ester, amide, ether, sulfide, disulfide, sulfoxide, and sulfone.

In some embodiments, at least one methylene unit of the alkylene moieties described herein is replaced by a heteroatom, such as, —O—, —NH—, —S—, and the like.

In some embodiments, n is an integer from 2 to 6000. In some embodiments, n is an integer from 3 to 3000. In some embodiments, n is an integer from 3 to 1000. In some embodiments, n is an integer from 5 to 300. In some embodiments, n is an integer from 5 to 50. In some embodiments, n is an integer from 10 to 20 (e.g., 12 or 15).

In some embodiments, the polymeric biguanides contemplated as components in the compositions described herein have the above structure wherein R²⁵ is H, R²⁶ is C₆ alkylene, and n is 12 or 15.

In addition to the polymeric biguanides set forth above, polymeric biguanides bearing pendant biguanide moieties are contemplated. Examples of these embodiments include, but are not limited to, polymerization products of biguanidyl-substituted α-olefin monomers, such as poly(vinylbiguanide), poly(N-vinylbiguanide), poly(allylbiguanide), and co-polymers thereof. It is understood that the biguanidyl-substituted α-olefin monomers can be co-polymerized with a variety of olefinic monomers, such that the number of pendant biguanidyl moieties per polymer chain can be varied widely.

The biguanides disclosed herein readily form salts with a variety of acids, both organic and inorganic. Inorganic acid salts of the biguanides contemplated for use in the compositions described herein include, but are not limited to, hydrochloric, hydrofluoric, hydrobromic, hydroiodic, phosphonic, phosphoric, sulfonic, sulfuric, and the like. Organic acid salts of the biguanides contemplated for use in the compositions described herein include, but are not limited to, optionally substituted carboxylic acids such as valeric, hexanoic, octanoic, 2-octenoic, lauric, 5-dodecenoic, myristic, pentadecanoic, palmitic, oleic, stearic, eicosanoic, heptadecanoic, palmitoleic, ricinoleic, 12-hydroxystearic, 16-hydroxyhexadecanoic, 2-hydroxycaproic, 12-hydroxydodecanoic, 5-hydroxydodecanoic, 5-hydroxydecanoic, 4-hydroxydecanoic, dodecanedioic, undecanedioic, sebacic, benzoic, hydroxbenzoic, teraphthalic, and the like.

Examples of other suitable second chelating agents include alkylenediamines such as ethylenediamine, propylenediamine, butylenediamine, hexylenediamine, diethylenetriamine, triethylenetetramines, and polyethyleneimine having at least 2 nitrogen containing groups.

In some embodiments, the compositions of this disclosure include at least about 0.01% by weight (e.g., at least about 0.1% by weight, at least about 0.2% by weight, at least about 0.3% by weight, or at least about 0.4% by weight) and/or at most about 1.8% by weight (e.g., at most about 1.5% by weight, at most about 1.3% by weight, at most about 1.1% by weight, at most about 1% by weight, at most about 0.8% by weight, at most about 0.7% by weight, at most about 0.6% by weight, or at most about 0.5% by weight) of the second chelating agent.

The compositions of this disclosure contain at least one metal corrosion inhibitor selected from substituted or unsubstituted benzotriazoles. Suitable classes of substituted benzotriazole include, but are not limited to, benzotriazoles substituted with alkyl groups, aryl groups, halogen groups, amino groups, nitro groups, alkoxy groups, and hydroxyl groups. Substituted benzotriazoles also include those fused with one or more aryl (e.g., phenyl) or heteroaryl groups. For the purposes of this disclosure, the phrase “substituted or unsubstituted benzotriazoles” is defined to exclude any benzotriazole compound simultaneously containing both a carboxyl group and a primary or secondary amino group.

Suitable benzotriazoles for use as a metal corrosion inhibitor include, but are not limited to, benzotriazole (BTA), 5-aminotetrazole, 1-hydroxybenzotriazole, 5-phenylthiol-benzotriazole, 5-chlorobenzotriazole, 4-chlorobenzotriazole, 5-bromobenzotriazole, 4-bromobenzotrazole, 5-fluorobenzotriazole, 4-fluorobenzotriazole, naphthotriazole, tolyltriazole, 5-phenyl-benzotriazole, 5-nitrobenzotriazole, 4-nitrobenzotrazole, 3-amino-5-mercapto-1,2,4-trazole, 2-(5-amino-pentyl)-benzotriazole, 1-amino-benzotriazole, 5-methyl-1H-benzotriazole (or 5-methylbenzotriazole), benzotriazole-5-carboxylic acid, 4-methylbenzotriazole, 4-ethylbenzotriazole, 5-ethylbenzotriazole, 4-propylbenzotriazole, 5-propylbenzotriazole, 4-isopropylbenzotriazole, 5-isopropylbenzotriazole, 4-n-butylbenzotriazole, 5-n-butylbenzotriazole, 4-isobutylbenzotriazole, 5-isobutylbenzotriazole, 4-pentylbenzotriazole, 5-pentylbenzotriazole, 4-hexylbenzotriazole, 5-hexylbenzotriazole, 5-methoxybenzotriazole, 5-hydroxybenzotriazole, dihydroxypropylbenzotriazole, 1-[N,N-bis(2-ethylhexyl)aminomethyl]-benzotriazole, 5-t-butyl benzotriazole, 5-(1′,1′-dimethylpropyl)-benzotriazole, 5-(1′,1′,3′-trimethylbutyl)benzotriazole, 5-n-octyl benzotriazole, and 5-(1′,1′,3′,3′-tetramethylbutyl)benzotriazole.

In some embodiments, the compositions of this disclosure include at least about 0.05% by weight (e.g., at least about 0.1% by weight, at least about 0.2% by weight, or at least about 0.3% by weight) and/or at most about 1% by weight (e.g., at most about 0.7% by weight, at most about 0.6% by weight, or at most about 0.5% by weight) of the metal corrosion inhibitor.

The compositions of this disclosure contain at least one organic solvent selected from the group of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers (e.g., glycol diethers).

Classes of water soluble alcohols include, but are not limited to, alkane diols (including, but not limited to, alkylene glycols), glycols, alkoxyalcohols (including but not limited to glycol monoethers), saturated aliphatic monohydric alcohols, unsaturated non-aromatic monohydric alcohols, and low molecular weight alcohols containing a ring structure.

Examples of water soluble alkane diols includes, but are not limited to, 2-methyl-1,3-propanediol, 1,3-propanediol, 2,2-dimethyl-1,3-propanediol, 1,4-butanediol, 1,3-butanediol, 1,2-butanediol, 2,3-butanediol, pinacol, and alkylene glycols.

Examples of water soluble alkylene glycols include, but are not limited to, ethylene glycol, propylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol and tetraethyleneglycol.

Examples of water soluble alkoxyalcohols include, but are not limited to, 3-methoxy-3-methyl-1-butanol, 3-methoxy-1-butanol, 1-methoxy-2-butanol, and water soluble glycol monoethers.

Examples of water soluble glycol monoethers include, but are not limited to, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono n-propyl ether, ethylene glycol monoisopropyl ether, ethylene glycol mono n-butyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutylether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monobutyl ether, 1-methoxy-2-propanol, 2-methoxy-1-propanol, 1-ethoxy-2-propanol, 2-ethoxy-1-propanol, propylene glycol mono-n-propyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol mono-n-propyl ether, tripropylene glycol monoethyl ether, tripropylene glycol monomethyl ether and ethylene glycol monobenzyl ether, diethylene glycol monobenzyl ether.

Examples of water soluble saturated aliphatic monohydric alcohols include, but are not limited to, methanol, ethanol, n-propyl alcohol, isopropyl alcohol, 1-butanol, 2-butanol, isobutyl alcohol, tert-butyl alcohol, 2-pentanol, t-pentyl alcohol, and 1-hexanol.

Examples of water soluble unsaturated non-aromatic monohydric alcohols include, but are not limited to, allyl alcohol, propargyl alcohol, 2-butenyl alcohol, 3-butenyl alcohol, and 4-penten-2-ol.

Examples of water soluble, low molecular weight alcohols containing a ring structure include, but are not limited, to tetrahydrofurfuryl alcohol, furfuryl alcohol, and 1,3-cyclopentanediol.

Examples of water soluble ketones include, but are not limited to, acetone, propanone, cyclobutanone, cyclopentanone, cyclohexanone, diacetone alcohol, 2-butanone, 5-hexanedione, 1,4-cyclohexanedione, 3-hydroxyacetophenone, 1,3-cyclohexanedione, and cyclohexanone.

Examples of water soluble esters include, but are not limited to, ethyl acetate, glycol monoesters such as ethylene glycol monoacetate, diethyleneglycol monoacetate, and glycol monoether monoesters such as propylene glycol monomethyl ether acetate, ethylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, and ethylene glycol monoethyl ether acetate.

In some embodiments, the compositions of this disclosure include at least about 1% by weight (e.g., at least about 5% by weight, at least about 8% by weight, or at least about 10% by weight) and/or at most about 30% by weight (e.g., at most about 25% by weight, at most about 20% by weight, or at most about 15% by weight) of the organic solvent.

The cleaning compositions of the present disclosure further include water. Preferably, the water is de-ionized and ultra-pure, contains no organic contaminants and has a minimum resistivity of about 4 to about 17 mega Ohms. More preferably, the resistivity of the water is at least 17 mega Ohms.

In some embodiments, the compositions of this disclosure include at least about 78% by weight (e.g., at least about 80% by weight, at least about 83% by weight, or at least about 85% by weight) and/or at most about 98% by weight (e.g., at most about 95% by weight, at most about 93% by weight, or at most about 90% by weight) of water.

The compositions of this disclosure optionally contains at least one pH adjusting agent to control the pH to between about 6 to about 11. In some embodiments, the compositions of this disclosure can have a pH of at least about 6 (e.g., at least about 6.5, at least about 7, or at least about 7.5) to at most about 11 (e.g., at most about 10, at most about 9.5, at most about 9, at most about 8.5). Without wishing to be bound by theory, it is believed that a cleaning composition having a pH higher than 11 decreases the plasma etch residue cleaning to an impractical level for complete cleaning and that a pH lower than 6 would increase the etch rate of W to an undesirable level. The effective pH can vary depending on the types and amounts of the ingredients used in the compositions described herein.

The amount of pH adjusting agent required, if any, can vary as the concentration of the other components is varied in different formulations, particularly the hydroxylamine, the first chelating agent polyaminopolycarboxylic acid, and the second chelating agent (or its neutralized salt), and as a function of the molecular weight of the particular pH adjusting agent employed. In general, the pH adjusting agent concentration ranges from about 0.1% to about 3%. In some embodiments, the cleaning compositions of this disclosure include at least about 0.1% by weight (e.g., at least about 0.5% by weight, at least about 1% by weight, or at least about 1.5% by weight) and/or at most about 3% by weight (e.g., at most about 2.5% by weight, at most about 2% by weight, or at most about 1.5% by weight) of the pH adjusting agent.

In general, the pH adjusting agent is free of any metal ion (except for a trace amount of metal ion impurities). Suitable metal ion free pH adjusting agents include ammonium hydroxide, quaternary ammonium hydroxides, monoamines (including alkanolamines), imines (such as 1,8-diazabicyclo[5.4.0]-7-undecene and 1,5-diazabicyclo[4.3.0]-5-nonene), and guanidine salts (such as guanidine carbonate).

Examples of suitable quaternary ammonium hydroxides, include, but are not limited to, tetramethyl ammonium hydroxide, tetraethyl ammonium hydroxide, tetrapropyl ammonium hydroxide, tetrabutyl ammonium hydroxide, dimethyldiethylammonium hydroxide, choline, tetraethanolammonium hydroxide, benzyltrimethylammonium hydroxide, benzyltriethylammonium hydroxide, and benzyltributylammonium hydroxide.

Examples of suitable monoamines include, but are not limited to, triethylamine, tributylamine, tripentylamine, ethanolamine, diethanolamine, diethylamine, butylamine, dibutylamine, and benzylamine.

In some embodiments, the non-corrosive cleaning composition of this disclosure contains, consists, or consists essentially of at least about 0.5% by weight (e.g., at least about 1% by weight, at least about 2% by weight, at least about 3% by weight, or at least about 5% by weight) and/or at most about 20% by weight (e.g., at most about 17% by weight, at most about 15% by weight, at most about 12% by weight, or at most about 10% by weight) of the redox agent; at least about 0.01% by weight (e.g., at least about 0.1% by weight, at least about 0.2% by weight or at least about 0.3% by weight) and/or at most about 1% by weight (e.g., at most about 0.7% by weight, at most about 0.6% by weight or at most about 0.5% by weight) of the first chelating agent (i.e., a polyaminopolycarboxylic acid); at least about 0.01% by weight (e.g., at least about 0.1% by weight, at least about 0.2% by weight, at least about 0.3% by weight, or at least about 0.4% by weight) and/or at most about 1.8% by weight (e.g., at most about 1.5% by weight, at most about 1.3% by weight, at most about 1.1% by weight, at most about 1% by weight, at most about 0.8% by weight, at most about 0.7% by weight, at most about 0.6% by weight, or at most about 0.5% by weight) of the second chelating agent; at least about 0.05% by weight (e.g., at least about 0.1% by weight, at least about 0.2% by weight, or at least about 0.3% by weight) and/or at most about 1% by weight (e.g., at most about 0.7% by weight, at most about 0.6% by weight, or at most about 0.5% by weight) of the metal corrosion inhibitor selected from the group consisting of substituted and unsubstituted benzothiazoles; at least about 1% by weight (e.g., at least about 5% by weight, at least about 8% by weight, or at least about 10% by weight) and/or at most about 30% by weight (e.g., at most about 25% by weight, at most about 20% by weight, or at most about 15% by weight) of the organic solvent; at least about 78% by weight (e.g., at least about 80% by weight, at least about 83% by weight, or at least about 85% by weight) and/or at most about 98% by weight (e.g., at most about 95% by weight, at most about 93% by weight, or at most about 90% by weight) of water; and optionally, about 0.1% to about 3% of a metal ion free pH adjusting agent; wherein the pH of the non-corrosive cleaning composition is from at least 6 (e.g., at least about 6.5, at least about 7, or at least about 7.5) to at most about 11 (e.g., at most about 10, at most about 9.5, at most about 9, at most about 8.5).

In some embodiments, the non-corrosive cleaning composition of this disclosure contains, consists, or consists essentially of at least about 0.5% by weight (e.g., at least about 1% by weight, at least about 2% by weight, at least about 3% by weight, or at least about 5% by weight) and/or at most about 20% by weight (e.g., at most about 17% by weight, at most about 15% by weight, at most about 12% by weight, or at most about 10% by weight) of hydroxylamine; at least about 0.01% by weight (e.g., at least about 0.1% by weight, at least about 0.2% by weight or at least about 0.3% by weight) and/or at most about 1% by weight (e.g., at most about 0.7% by weight, at most about 0.6% by weight or at most about 0.5% by weight) of the first chelating agent (i.e., a polyaminopolycarboxylic acid); at least about 0.01% by weight (e.g., at least about 0.1% by weight, at least about 0.2% by weight, at least about 0.3% by weight, or at least about 0.4% by weight) and/or at most about 1.8% by weight (e.g., at most about 1.5% by weight, at most about 1.3% by weight, at most about 1.1% by weight, at most about 1% by weight, at most about 0.8% by weight, at most about 0.7% by weight, at most about 0.6% by weight, or at most about 0.5% by weight) of the second chelating agent selected from the group consisting of compounds having at least two nitrogen containing groups selected from the group consisting of primary amino, secondary amino, imidazolyl, triazolyl, benzotriazolyl, piperazinyl, pyrolyl, pyrrolidinyl, pyrazolyl, piperidinyl, guanidinyl, biguanidinyl, carbazatyl, hydrazidyl, semicarbazidyl, and aminoguanidinyl; at least about 0.05% by weight (e.g., at least about 0.1% by weight, at least about 0.2% by weight, or at least about 0.3% by weight) and/or at most about 1% by weight (e.g., at most about 0.7% by weight, at most about 0.6% by weight, or at most about 0.5% by weight) of the metal corrosion inhibitor selected from the group consisting of substituted and unsubstituted benzotriazoles; at least about 1% by weight (e.g., at least about 5% by weight, at least about 8% by weight, or at least about 10% by weight) and/or at most about 30% by weight (e.g., at most about 25% by weight, at most about 20% by weight, or at most about 15% by weight) of the organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; at least about 78% by weight (e.g., at least about 80% by weight, at least about 83% by weight, or at least about 85% by weight) and/or at most about 98% by weight (e.g., at most about 95% by weight, at most about 93% by weight, or at most about 90% by weight) of water; and optionally, about 0.1% to about 3% of a metal ion free pH adjusting agent; wherein the pH of the non-corrosive cleaning composition is from at least 6 (e.g., at least about 6.5, at least about 7, or at least about 7.5) to at most about 11 (e.g., at most about 10, at most about 9.5, at most about 9, at most about 8.5).

In some embodiments, the non-corrosive cleaning composition of this disclosure contains, consists, or consists essentially of at least about 0.5% by weight (e.g., at least about 1% by weight, at least about 2% by weight, at least about 3% by weight, or at least about 5% by weight) and/or at most about 20% by weight (e.g., at most about 17% by weight, at most about 15% by weight, at most about 12% by weight, or at most about 10% by weight) of hydroxylamine; at least about 0.01% by weight (e.g., at least about 0.1% by weight, at least about 0.2% by weight or at least about 0.3% by weight) and/or at most about 1% by weight (e.g., at most about 0.7% by weight, at most about 0.6% by weight or at most about 0.5% by weight) of the first chelating agent (i.e., a polyaminopolycarboxylic acid); at least about 0.01% by weight (e.g., at least about 0.1% by weight, at least about 0.2% by weight, at least about 0.3% by weight, or at least about 0.4% by weight) and/or at most about 1.8% by weight (e.g., at most about 1.5% by weight, at most about 1.3% by weight, at most about 1.1% by weight, at most about 1% by weight, at most about 0.8% by weight, at most about 0.7% by weight, at most about 0.6% by weight, or at most about 0.5% by weight) of the second chelating agent selected from the group consisting of a monocarboxylic acid compound containing a primary or secondary amino group and at least one additional nitrogen-containing basic group, a biguanide compound having Structure II, and a compound having multiple biguanide groups; at least about 0.05% by weight (e.g., at least about 0.1% by weight, at least about 0.2% by weight, or at least about 0.3% by weight) and/or at most about 1% by weight (e.g., at most about 0.7% by weight, at most about 0.6% by weight, or at most about 0.5% by weight) of the metal corrosion inhibitor selected from the group consisting of substituted and unsubstituted benzotriazoles; at least about 1% by weight (e.g., at least about 5% by weight, at least about 8% by weight, or at least about 10% by weight) and/or at most about 30% by weight (e.g., at most about 25% by weight, at most about 20% by weight, or at most about 15% by weight) of the organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; at least about 78% by weight (e.g., at least about 80% by weight, at least about 83% by weight, or at least about 85% by weight) and/or at most about 98% by weight (e.g., at most about 95% by weight, at most about 93% by weight, or at most about 90% by weight) of water; and optionally, about 0.1% to about 3% of a metal ion free pH adjusting agent; wherein the pH of the non-corrosive cleaning composition is from at least 6 (e.g., at least about 6.5, at least about 7, or at least about 7.5) to at most about 11 (e.g., at most about 10, at most about 9.5, at most about 9, at most about 8.5).

In addition, in some embodiments, the cleaning compositions of the present disclosure may contain additives such as, additional pH adjusting agents, additional corrosion inhibitors, surfactants, additional organic solvents, biocides, and defoaming agents as optional components.

Examples of suitable defoaming agents include polysiloxane defoamers (e.g., polydimethylsiloxane), polyethylene glycol methyl ether polymers, ethylene oxide/propylene oxide copolymers, and glycidyl ether capped acetylenic diol ethoxylates (such as those described in U.S. Pat. No. 6,717,019, herein incorporated by reference).

In some embodiments, the cleaning compositions of the present disclosure may specifically exclude one or more of the additive components, in any combination, if more than one. Such components are selected from the group consisting of oxygen scavengers, quaternary ammonium hydroxides, amines, alkali metal and alkaline earth bases (such as NaOH, KOH, LiOH, magnesium hydroxide, and calcium hydroxide), surfactants other than a defoamer, fluoride containing compounds, oxidizing agents (e.g., peroxides, hydrogen peroxide, ferric nitrate, potassium iodate, potassium permanganate, nitric acid, ammonium chlorite, ammonium chlorate, ammonium iodate, ammonium perborate, ammonium perchlorate, ammonium periodate, ammonium persulfate, tetramethylammonium chlorite, tetramethylammonium chlorate, tetramethylammonium iodate, tetramethylammonium perborate, tetramethylammonium perchlorate, tetramethylammonium periodate, tetramethylammonium persulfate, urea hydrogen peroxide, and peracetic acid), abrasives, silicates, hydroxycarboxylic acids, carboxylic and polycarboxylic acids lacking amino groups, non-azole corrosion inhibitors, guanidine, guanidine salts, inorganic acids (e.g., sulfonic acids, sulfuric acid, sulfurous acid, nitrous acid, nitric acid, phosphorous acid, and phosphoric acid), pyrrolidone, polyvinyl pyrrolidone, metal halides, metal halides of the formula W_(z)MX_(y), wherein W is selected from H, an alkali or alkaline earth metal, and a metal-ion-free hydroxide base moiety; M is a metal selected from the group consisting of Si, Ge, Sn, Pt, P, B, Au, Ir, Os, Cr, Ti, Zr, Rh, Ru and Sb; y is from 4 to 6; and z is 1, 2, or 3, and corrosion inhibitors other than those described in this disclosure.

In general, the cleaning compositions of the present disclosure are not specifically designed to remove bulk photoresist films from semiconductor substrates. Rather, the cleaning compositions of the present disclosure are generally designed to remove all residues after bulk resist removal by dry or wet stripping methods. Therefore, the cleaning method of the present disclosure is preferably employed after a dry or wet photoresist stripping process. This photoresist stripping process is generally preceded by a pattern transfer process, such as an etch or implant process, or it is done to correct mask errors before pattern transfer. The chemical makeup of the residue will depend on the process or processes preceding the cleaning step.

Any suitable dry stripping process can be used to remove bulk resist from semiconductor substrates. Examples of suitable dry stripping processes include oxygen based plasma ashing, such as a fluorine/oxygen plasma or a N₂/H₂ plasma; ozone gas phase-treatment; fluorine plasma treatment, hot H₂ gas treatment (such as that described in U.S. Pat. No. 5,691,117 incorporated herein by reference in its entirety), and the like. In addition, any conventional organic wet stripping solution known to a person skilled in the art can be used to remove bulk resist from semiconductor substrates.

A preferred stripping process used in combination with the cleaning method of the present disclosure is a dry stripping process. Preferably, this dry stripping process is the oxygen based plasma ashing process. This process removes most of the photoresist from the semiconductor substrate by applying a reactive-oxygen atmosphere at elevated temperatures (typically 250° C.) at vacuum conditions (i.e., 1 torr). Organic materials are oxidized by this process and are removed with the process gas. However, this process does not remove inorganic or organometallic contamination from the semiconductor substrate. A subsequent cleaning of the semiconductor substrate with the cleaning composition of the present disclosure is typically necessary to remove those residues.

One embodiment of the present disclosure is a method of cleaning residues from a semiconductor substrate that includes contacting a semiconductor substrate containing post etch residues and/or post ash residues with a cleaning composition described herein. The method can further include rinsing the semiconductor substrate with a rinse solvent after the contacting step and/or drying the semiconductor substrate after the rinsing step.

In some embodiments, the cleaning method include the steps of:

-   -   (A) providing a semiconductor substrate containing post etch         and/or post ash residues;     -   (B) contacting said semiconductor substrate with a cleaning         composition described herein;     -   (C) rinsing said semiconductor substrate with a suitable rinse         solvent; and     -   (D) optionally, drying said semiconductor substrate by any means         that removes the rinse solvent and does not compromise the         integrity of said semiconductor substrate.         In some embodiments, the cleaning method further includes         forming a semiconductor device (e.g., an integrated circuit         device such as a semiconductor chip) from the semiconductor         substrate obtained by the method described above.

The semiconductor substrates to be cleaned in this method can contain organic and organometallic residues, and additionally, a range of metal oxides that need to be removed. Semiconductor substrates typically are constructed of silicon, silicon germanium, Group III-V compounds like GaAs, or any combination thereof. The semiconductor substrates may additionally contain exposed integrated circuit structures such as interconnect features like metal lines and dielectric materials. Metals and metal alloys used for interconnect features include, but are not limited to, aluminum, aluminum alloyed with copper, copper, titanium, tantalum, cobalt, and silicon, titanium nitride, tantalum nitride, and tungsten. Said semiconductor substrate may also contain layers of interlayer dielectrics, silicon oxide, silicon nitride, silicon carbide, titanium oxide, and carbon doped silicon oxides.

The semiconductor substrate can be contacted with a cleaning composition by any suitable method, such as placing the cleaning composition into a tank and immersing and/or submerging the semiconductor substrates into the cleaning composition, spraying the cleaning composition onto the semiconductor substrate, streaming the cleaning composition onto the semiconductor substrate, or any combinations thereof. Preferably, the semiconductor substrates are immersed into the cleaning composition.

The cleaning compositions of the present disclosure may be effectively used up to a temperature of about 90° C. Preferably, the cleaning compositions can be used from about 25° C. to about 80° C. More preferably, the cleaning compositions can be employed in the temperature range from about 30° C. to about 60° C. and most preferred is a temperature range of about 40° C. to about 60° C.

Similarly, cleaning times can vary over a wide range depending on the particular cleaning method and temperature employed. When cleaning in an immersion batch type process, a suitable time range is, for example, up to about 60 minutes. A preferred range for a batch type process is from about 1 minute to about 60 minutes. A more preferred time range for a batch type process is from about 3 minutes to about 20 minutes. A most preferred time range for a batch type cleaning process is from about 4 minutes to about 15 minutes.

Cleaning times for a single wafer process may range from about 10 seconds to about 5 minutes. A preferred cleaning time for a single wafer process may range from about 15 seconds to about 4 minutes. A more preferred cleaning time for a single wafer process may range from about 15 seconds to about 3 minutes. A most preferred cleaning time for a single wafer process may range from about 20 seconds to about 2 minutes.

To further promote the cleaning ability of the cleaning composition of the present disclosure, mechanical agitation means may be employed. Examples of suitable agitation means include circulation of the cleaning composition over the substrate, streaming or spraying the cleaning composition over the substrate, and ultrasonic or megasonic agitation during the cleaning process. The orientation of the semiconductor substrate relative to the ground may be at any angle. Horizontal or vertical orientations are preferred.

The cleaning compositions of the present disclosure can be used in conventional cleaning tools known to those skilled in the art. A significant advantage of the compositions of the present disclosure is that they include relatively non-toxic, non-corrosive, and non-reactive components in whole and in part, whereby the compositions are stable in a wide range of temperatures and process times. The compositions of the present disclosure are chemically compatible with practically all materials used to construct existing and proposed semiconductor wafer cleaning process tools for batch and single wafer cleaning.

Subsequent to the cleaning, the semiconductor substrate is rinsed with a suitable rinse solvent for about 5 seconds up to about 5 minutes with or without agitation means. Examples of suitable rinse solvents include, but are not limited to, deionized (DI) water, methanol, ethanol, isopropyl alcohol, N-methylpyrrolidinone, gamma-butyrolactone, dimethyl sulfoxide, ethyl lactate and propylene glycol monomethyl ether acetate. Alternatively, aqueous rinses with pH >8 (such as dilute aqueous ammonium hydroxide) may be employed. Preferred examples of rinse solvents include, but are not limited to, dilute aqueous ammonium hydroxide, DI water, methanol, ethanol and isopropyl alcohol. More preferred rinse solvents are dilute aqueous ammonium hydroxide, DI water and isopropyl alcohol. The most preferred rinse solvents are dilute aqueous ammonium hydroxide and DI water. The solvent may be applied using means similar to that used in applying a cleaning composition described herein. The cleaning composition may have been removed from the semiconductor substrate prior to the start of the rinsing step or it may still be in contact with the semiconductor substrate at the start of the rinsing step. Preferably, the temperature employed in the rinsing step is between 16° C. and 27° C.

Optionally, the semiconductor substrate is dried after the rinsing step. Any suitable drying means known in the art may be employed. Examples of suitable drying means include spin drying, flowing a dry gas across the semiconductor substrate, or heating the semiconductor substrate with a heating means such as a hotplate or infrared lamp, Marangoni drying, rotagoni drying, IPA drying or any combinations thereof. Drying times will be dependent on the specific method employed but are typically on the order of 30 seconds up to several minutes.

In some embodiments, a method of manufacturing an integrated device using a cleaning composition described herein can include the following steps. First, a layer of a photoresist is applied to a semiconductor substrate. The semiconductor substrate thus obtained can then undergo a pattern transfer process, such as an etch or implant process, to form an integrated circuit. The bulk of the photoresist can then be removed by a dry or wet stripping method (e.g., an oxygen based plasma ashing process). Remaining residues on the semiconductor substrate can then be removed using a cleaning composition described herein in the manner described above. The semiconductor substrate can subsequently be processed to form one or more additional circuits on the substrate or can be processed to form into a semiconductor chip by, for example, assembling (e.g., dicing and bonding) and packaging (e.g., chip sealing).

EXAMPLES

The present disclosure is illustrated in more detail with reference to the following examples, which are for illustrative purposes and should not be construed as limiting the scope of the present disclosure. Any percentages listed are by weight (wt %) unless otherwise specified. Controlled stirring during testing was done with a 1 inch stirring bar at 300 rpm unless otherwise noted.

General Procedure 1 Formulation Blending

Samples of cleaning compositions were prepared by adding, while stirring, to the calculated amount of ultra-pure deionized water (DIW) the components of the cleaning formulation except for the metal ion free pH adjuster. After a uniform solution was achieved, the optional additives, if used, were added. Formulation of the composition was completed by the addition of the pH adjuster. The solution was allowed to equilibrate and the pH of the cleaning composition was taken, if desired.

The pH measurements, if desired, were taken at ambient temperature (17-25° C.) after all components were fully dissolved. Beckman Coulter ϕ 400 Series Handheld meters can be used for these pH measurements. All components used were commercially available and of high purity.

General Procedure 2 Cleaning Evaluation with Beaker Test

The cleaning of PER (Post Etch Residue) from a substrate was carried out with the described cleaning compositions using a multilayered substrate of Photoresist/TiOx/SiN/Co/ILD (ILD=Inter Layer Dielectric) or photoresist/TiOx/SiN/W/ILD that had been patterned lithographically, etched in a plasma metal etcher, and followed by oxygen plasma ashing to remove the top layer of photoresist completely.

The test coupons were held using 4″ long plastic locking tweezers, whereby the coupon could then be suspended into a 500 ml volume glass beaker containing approximately 200 milliliters of the cleaning compositions of the present disclosure. Prior to immersion of the coupon into the cleaning composition, the composition was pre-heated to the desired test condition temperature (typically 40° C. or 60° C. as noted) with controlled stirring. The cleaning tests were then carried out by placing the coupon which was held by the plastic tweezers into the heated composition in such a way that the PER layer containing side of the coupon faced the stir bar. The coupon was left static in the cleaning composition for a time period (typically 2 to 5 minutes) while the composition was kept at the test temperature under controlled stirring. When the desired cleaning time was completed, the coupon was quickly removed from the cleaning composition and placed in a 500 ml plastic beaker filled with approximately 400 ml of DI water at ambient temperature (˜17° C.) with gentle stirring. The coupon was left in the beaker of DI water for approximately 30 seconds, and then quickly removed, and rinsed under a DI water stream at ambient temperature for about 30 seconds. The coupon was immediately exposed to a nitrogen gas stream from a hand held nitrogen blowing gun, which caused any droplets on the coupon surface to be blown off the coupon, and further, to completely dry the coupon device surface. Following this final nitrogen drying step, the coupon was removed from the plastic tweezers holder and placed into a covered plastic carrier with the device side up for short term storage no greater than about 2 hours. The scanning electron microscopy (SEM) images were then collected for key features on the cleaned test coupon device surface.

General Procedure 3 Materials Compatibility Evaluation with Beaker Test

The blanket Co on silicon substrate, W on silicon substrate, TiOx on SiO₂ on silicon substrate, SiN on silicon substrate, ILD on silicon substrate were diced into approximately 1 inch×1 inch square test coupons for the materials compatibility tests. The test coupons were initially measured for thickness or sheet resistance by the 4-point probe, CDE Resmap 273 for metallic film (Co, W), or by Elipsometry for dielectric film (TiOx, SiN and ILD) using a Woollam M-2000X. The test coupons were then installed on the 4″ long plastic locking tweezers and treated as described in the cleaning procedure in General Procedure 2 with the Co, W, TiOx, SiN, or ILD layer containing side of the coupon faced the stir bar for 10 minutes.

After the final nitrogen drying step, the coupon was removed from the plastic tweezers holder and placed into a covered plastic carrier. The post-thickness or sheet resistance was then collected on the post-processing test coupon surface by the 4-point probe, CDE Resmap 273 for metallic film (Co and W) or by Elipsometry for dielectric film (TiOx, SiN and ILD) using a Woollam M-2000X.

Formulation Examples FE-1-FE-5 and Comparative Formulation Examples CFE-1-CFE-4

Table 1 contains formulations FE-1-FE-5 and comparative formulations CFE-1-CFE-4 prepared by General Procedure 1.

TABLE 1 Polyamino- Hydroxyl- polycarboxylic Second Corr. Org. pH Ex. H₂O₂ amine acid Chelant Inhib. Solvent Water adjuster pH FE-1 none 4.00% DTPA CDC 5MBTA EGBE 90.25% none 6.83 (0.5%) (0.001%) (0.25%) (5%) FE-2 none 4.00% DTPA CDC 5MBTA EGBE 89.75% DBU 7.47 (0.5%) (0.001%) (0.25%) (5%) (0.5%) FE-3 none 4.00% DTPA CDC 5MBTA EGBE 89.32% DBU 8.49 (0.5%) (0.001%) (0.25%) (5%) (0.93%) FE-4 none 4.00% DTPA CDC 5MBTA EGBE 88.96% DBU 9.01 (0.5%) (0.001%) (0.25%) (5%) (1.04%) CFE-1 none 4.00% DTPA CDC 5MBTA EGBE 89.11% DBU 9.6 (0.5%) (0.001%) (0.25%) (5%) (1.14%) CFE-2 none 4.00% DTPA CDC 5MBTA EGBE 88.97% DBU 10.2 (0.5%) (0.001%) (0.25%) (5%) (1.28%) FE-5 none 4.00% DTPA Arginine 5MBTA EGBE 89.16% DBU 8.47 (0.5%) (0.25%)  (0.25%) (5%) (0.85%) CFE-3 none 4.00% DTPA none 5MBTA EGBE 89.29% DBU 8.53 (0.5%) (0.25%) (5%) (0.97%) CFE-4 5% none DTPA none 5MBTA EGBE 83.98% DBU 7.9  (0.25%) (0.22%) (10%) (0.55%) EGBE = ethylene glycol butyl ether; DTPA = diethylenetriamine pentaacetic acid; 5MBTA = 5-methyl-1H-benzotriazole; DBU = .1,8-diazabicyclo[5.4.0]undec-7-ene; CDC = chlorhexidine dihydrochloride

Examples 1-5 and Comparative Examples CE1-CE4 Compatibility of Cleaners with Exposed Metals

Formulation Examples FE-1-FE-5 and Comparative Formulation Examples CFE-1-CFE-4 were tested for cleaning according to General Procedure 2 and for materials compatibility according to General Procedure 3 at 65° C. for 4 minutes. The etch rates (Angstroms/minute) of Co, W, TiOx, SiN, SiC, TEOS (tetraethyl-orthosilicate), and ILD in the cleaning compositions are shown in Table 2.

TABLE 2 Formulation Clean Example Example TiOx W Co ILD SiN SiC TEOS (4 min.) 1 FE-1 1.6 2.1 0.2 NA NA NA NA clean 2 FE-2 1.9 1.2 0.1 NA NA NA NA clean 3 FE-3 2.2 1.1 0.1 0.4 0.1 0.3 0.8 clean 4 FE-4 1.9 1 0.2 NA NA NA NA mostly clean CE-1 CFE-1 0.2 0.7 0.1 NA NA NA NA not clean CE-2 CFE-2 0.1 0.4 0.1 NA NA NA NA not clean 5 FE-5 2.4 4.3 0.1 0.4 0.3 0.3 0.7 clean CE-3 CFE-3 2.7 5.2 0.1 0.5 0.1 0 0.7 clean CE-4 CFE-4 3.6 >200 0.2 0.2 NA NA NA clean “NA” refers to data not available.

The data in Table 2 show that formulations of this disclosure (i.e., FE-1-FE-5) cleaned the post etch residue without significantly etching the semiconductor materials (such as Co, W, TiOx, SiN, SiC, TEOS, and ILD) typically found in semiconductor devices. On the other hand, Comparative Formulations CFE-1 and CFE-2 that had a pH above 9.5 resulted in poor cleaning. In addition, comparative formulation CFE-3 that had no second chelating agent exhibited significant etching of tungsten in the tested semiconductor substrate. Similarly, comparative formulation CFE-4 that included hydrogen peroxide instead of hydroxylamine also exhibited significant etching of tungsten in the semiconductor substrate.

Formulation Examples FE-6-FE-13 and Comparative Formulation Examples CFE-5 and CFE-6

Table 3 details formulations FE-6-FE-13 and Comparative Formulations CFE-5 and CFE-6, which were prepared by General Procedure 1.

TABLE 3 Polyamino- Formulation Hydroxyl polycarboxylic Second Corr. Organic pH Example amine acid Chelant Inhib. Solvent Water adjuster pH CFE-5 5.5% 0.50% none 0.25% 5% 87.86% 0.89% 8.68 HA DTPA 5MBTA EGBE DBU FE-6 5.5% 0.50% 0.75% 0.25% 5% 87.84% 0.16% 8.52 HA DTPA PBG 5MBTA EGBE DBU FE-7 5.5% 0.50% 1.08% 0.25% 5% 87.67% None 8.47 HA DTPA PBG 5MBTA EGBE FE-8 5.5% 0.50% 0.75% 0.25% 5% 86.75% 1.25% 10.72 HA DTPA PBG 5MBTA EGBE DBU FE-9 5.5% 0.50% 1.47% 0.25% 5% 85.58% 1.45% 8.60 HA DTPA PFCl 5MBTA EGBE DBU CFE-6 5.5% 0.50% 1.01% 0.25% 5% 86.79% 0.95% 8.55 HA DTPA MTCl 5MBTA EGBE DBU FE-10 6.25% 0.50% 0.95% 0.25% 5% 87.05% None 8.45 HA DTPA TBG 5MBTA EGBE FE-11 5.5% 0.50% 1.17% 0.25% 5% 87.58% None 8.54 HA DTPA TBG 5MBTA EGBE FE-12 5.5% 0.50% 1.30% 0.25% 5% 87.45% None 9.13 HA DTPA TBG 5MBTA EGBE FE-13 5.5% 0.50% 0.25% 0.25% 5% 87.64% 0.86% 8.54 HA DTPA GBI 5MBTA EGBE DBU

Examples 6-13 and Comparative Examples CE-5 and CE-6 Compatibility of Cleaners with Exposed Metals

Formulation Examples FE-6-FE-13 and Comparative Formulation Examples CFE-5 and CFE-6 were tested for cleaning ability according to General Procedure 2 and for materials compatibility according to General Procedure 3 at 65° C. for 4 minutes. The etch rates (Angstroms/minute) of Co, W, TiOx, SiN, SiC, and ILD (where available) for the cleaning compositions are shown in Table 4.

All formulations in Table 4 showed excellent cleaning ability. However, Comparative Formulations CFE-5 (no biguanide) and CFE-6 (dialkyl biguanide) showed unacceptably high W etch rates. Formulation Examples FE-6-FE13 showed significantly decreased W etch rates, while maintaining acceptable etch rates on other materials and having excellent cleaning.

TABLE 4 Formulation TiOx W Co SiN ILD Example Example [A/min] [A/min] [A/min] [A/min] [A/min] Cleaning¹ CE-5 CFE-5 3.4 6.4 NA NA NA 5  6 FE-6 2.9 1.6 NA NA NA 5  7 FE-7 2.7 1.2 0.3 0.8 NA 5  8 FE-8 3.3 2.4 NA NA NA 5  9 FE-9 3.2 3.0 0.8 NA NA 5 CE-6 CFE-6 3.5 6.6 0.3 NA NA 5 10 FE-10 3.2 1.3 0.4 NA NA 5 11 FE-11 3.3 1.2 0.4 0.5 0.4 5 12 FE-12 3.6 1.1 0.6 NA NA 5 13 FE-13 3.6 3.3 NA NA NA 5 ¹Rating of 5 is excellent; Rating of 1 is very poor. “NA” refers to data not available.

Examples 14-17 and Comparative Examples Ce-7 and Ce-8 Compatibility of Cleaners with Exposed Metals

Formulation examples FE-14 to FE-17 and comparative formulation examples CFE-7 and CFE-8 were tested for cleaning ability according to General Procedure 2 and for materials compatibility according to General Procedure 3 at 65° C. for 4 minutes. Table 5 sets forth the cleaning compositions. “Pol-BG” as set forth in Table 5 refers to polyhexamethylene biguanide, hydrochloride (see the structure below, n=12).

Polyhexamethylene Biguanide (Pol-BG), Hydrochloride

The etch rates (Angstroms/minute) of Co, W, TiOx, SiN, SiC, and ILD (where available) for the cleaning compositions are shown in Table 6.

TABLE 5 Polyamino- Form Hydroxyl polycarboxylic Second Corr. Organic pH pH Ex. amine acid Chelant Inhib. Solvent H₂O adjuster (65 C.) FE-14 5% 0.50% DTPA 0.01% 0.20% EGBE 3% 90.43% 0.763% 7.86 Pol-BG 5MBTA DBU FE-15 5% 0.70% DTPA 0.01% 0.20% EGBE 4% 89.16% 0.933% 8.00 Pol-BG 5MBTA DBU FE-16 4% 0.60% DTPA 0.01% 0.30% EGBE 4% 90.28% 0.81% 7.9 Pol-BG 5MBTA DBU FE-17 5% 0.50% DTPA 0.01% 0.25% EGBE 5% 88.50% 0.74% 8.3 Pol-BG 5MBTA DBU CFE-7 5% 0.60% DTPA None 0.20% EGBE 3% 90.44% 0.763% 8.00 5MBTA DBU CFE-8 4% 0.60% DTPA None 0.25% EGBE 5% 88.50% 0.74% 8.30 5MBTA DBU

TABLE 6 Form. TiOx W Co SiN ILD Ex. (A/min) (A/min) (A/min) (A/min) (A/min) Cleaning¹ FE-14 2.1 0.7 0.02 1.4 NA 5 FE-15 1.8 0.7 0.03 1.1 NA 5 FE-16 1.2 0.7 0.01 2.3 0.00 5 FE-17 0.9 0.6 0.01 1.5 0.00 4 CFE-7 2.1 2.4 0.10 0.9 0.00 5 CFE-8 1.9 2.1 0.00 1.2 NA 5 ¹Rating of 5 is excellent; rating of 1 is very poor. “NA” refers to data not available.

All formulations in Table 6 showed excellent cleaning ability. However comparative formulations CFE-7 and CFE-8 showed unacceptably high W etch rates. Formulation Examples FE-14 to FE17 showed significantly decreased W etch rates, while maintaining acceptable etch rates on other materials and having excellent cleaning.

Formulation Examples 18-38

To further elaborate on the compositions of this disclosure, additional cleaning compositions are described in Table 7. The “second chelant” in Table 7 refers to the polymeric biguanides having Structure (IV) (i.e., Polymers 1-8 below) or polymeric biguanides containing pendant biguanide groups (i.e., Polymers 9-12 below). Specifically, Polymers 1-8 are those of Structure (IV) in which n, R²⁵ and R²⁶ are defined below.

Polymer # R²⁵ R²⁶ n 1 H C₄-alkylene 10 2 H C₈-alkylene 15 3 H C₁₀-alkylene 20 4 H C₆-alkylene 100 5 H C₆-alkylene 200 6 H C₆-alkylene 300 7 H —CH₂CH₂—O—CH₂CH₂— 20 8 H —CH₂CH₂—CH(CO₂H)—CH₂CH₂— 20; Polymers 9-12 are those with pendant biguanide moieties and are listed below:

9 polyvinylbiguanide 10 polyallylbiguanide 11 poly(N-vinylbiguanide) 12 poly(allylbiguanide-co-allylamine)

TABLE 7 Polyamino- Form. Hydroxyl polycarboxylic Second Corr. Organic Ex. amine acid Chelant Inhib. Solvent H₂O FE-18 5.5% 0.50% DTPA Polymer 1 0.25% EGBE 5% 88.74% 0.01% 5MBTA FE-19 5.5% 0.50% DTPA Polymer 2 0.25% EGBE 5% 88.74% 0.01% 5MBTA FE-20 5.5% 0.50% DTPA Polymer 3 0.25% EGBE 5% 88.73% 0.02% 5MBTA FE-21 5.5% 0.50% DTPA Polymer 4 0.25% EGBE 5% 88.71% 0.04% 5MBTA FE-22 5.5% 0.50% DTPA Polymer 5 0.25% EGBE 5% 88.69% 0.06% 5MBTA FE-23 5.5% 0.50% DTPA Polymer 6 0.25% EGBE 5% 88.67% 0.08% 5MBTA FE-24 5.5% 0.50% DTPA Polymer 7 0.25% EGBE 5% 88.65% 0.10% 5MBTA FE-25 5.5% 0.50% DTPA Polymer 8 0.25% EGBE 5% 88.25% 0.50% 5MBTA FE-26 5.5% 0.50% DTPA Polymer 9 0.25% EGBE 5% 87.75% 1.0% 5MBTA FE-27 5.5% 0.50% DTPA Polymer 10 0.25% EGBE 5% 86.95% 1.8% 5MBTA FE-28 5.5% 0.50% DTPA Polymer 11 0.05% 2-ethoxy-1- 91.94% 0.01% BTA propanol 2% FE-29 5.5% 0.50% DTPA 1-(4- 0.10% diethylene 83.89% nitrophenyl) 1-hydroxy glycol biguanide BTA monobutylether 0.01% 10% FE-30 5.5% 0.50% DTPA 1,6-bis-(4- 0.40% ethylene glycol 78.59% chlorobenzyl 4-methyl mono n-propyl biguanido)- BTA ether hexane 15% 0.01% FE-31 5.5% 0.50% DTPA alexidine 0.50% diethylene 83.49% 0.01% 5-amino glycol tetrazole 10% FE-32 5.5% 0.50% DTPA 2,4-diamino- 1.0% 3-methoxy-1- 87.99% butyric acid 4-nitro butanol 0.01% BTA 5% FE-33 1.0% 0.50% EDTA histidine 0.25% EGBE 5% 93.24% 0.01% 5MBTA FE-34 2.5% 0.01% Polymer 12 0.25% EGBE 5% 92.23% diaminopropanol 0.01% 5MBTA tetraacetic acid FE-35* 7.0% 0.75% 1-hexyl-5- 0.25% EGBE 5% 86.49% ethylendiamine benzyl 5MBTA dipropionic acid biguanide 0.01% FE-36** 10% 1.0% Polymer 1 0.25% EGBE 5% 83.34% ethylendiamine 0.01% 5MBTA diacetic acid FE-37 1.0% 0.50% DTPA butylene 0.25% EGBE 5% 93.15% diamine 5MBTA 0.1% FE-38 2.5% 0.40% DTPA triethylene- 0.25% EGBE 5% 91.35% tetramine 5MBTA 0.5% *Formulation also contains 0.5% DBU. **Formulation also contains 0.4% tetramethylammonium hydroxide (TMAH). 

What is claimed is:
 1. A method, comprising: contacting a semiconductor substrate containing post etch residues or post ash residues with a non-corrosive cleaning composition, the composition comprising: hydroxylamine in an amount of from about 0.5% to about 20% by weight of the composition; a chelating agent comprising at least two nitrogen-containing groups, the chelating agent being in an amount of from about 0.01% to about 1% by weight of the composition; an alkylene glycol; a metal corrosion inhibitor comprising a substituted or unsubstituted benzotriazole; and water; wherein the pH of the composition is from about 7.5 to about 11 and the semiconductor substrate comprises an interconnect feature containing cobalt.
 2. The method of claim 1, wherein the chelating agent further includes a hydroxyl group.
 3. The method of claim 1, wherein the metal corrosion inhibitor is in an amount of from about 0.2% to about 1% by weight of the composition.
 4. The method of claim 1, wherein the composition is configured to remove residues from a semiconductor substrate, and the semiconductor substrate comprises interconnect features containing cobalt.
 5. The method of claim 4, wherein the composition is configured to remove residues from a semiconductor substrate without substantially removing cobalt from the semiconductor substrate.
 6. The method of claim 4, wherein the composition has a cobalt etch rate of at most 0.8 Angstroms/minute based on materials compatibility evaluation of a blanket cobalt on a silicon substrate at 65° C. for 4 minutes.
 7. The method of claim 1, wherein the at least two nitrogen groups comprise a primary amino group and a secondary amino group.
 8. A method, comprising: contacting a semiconductor substrate containing post etch residues or post ash residues with a cleaning composition, the composition comprising: hydroxylamine in an amount of from about 0.5% to about 20% by weight of the composition; a chelating agent comprising at least two nitrogen-containing groups, the chelating agent being in an amount of from about 0.01% to about 1% by weight of the composition; an alkylene glycol in an amount of at most about 30% by weight of the composition; a metal corrosion inhibitor comprising a substituted or unsubstituted benzotriazole, the metal corrosion inhibitor being in an amount of from about 0.05% to about 1% by weight of the composition; and water in an amount of at most about 90% by weight of the composition; wherein the pH of the composition is from about 7.5 to about 11 and the semiconductor substrate comprises an interconnect feature containing cobalt.
 9. The composition method of claim 8, wherein the composition is non-corrosive.
 10. The method of claim 8, wherein the chelating agent further includes a hydroxyl group.
 11. The method of claim 8, wherein the metal corrosion inhibitor is in an amount of from about 0.2% to about 1% by weight of the composition.
 12. The method of claim 8, wherein the composition is configured to remove residues from a semiconductor substrate, and the semiconductor substrate comprises interconnect features containing cobalt.
 13. The method of claim 12, wherein the composition is configured to remove residues from a semiconductor substrate without substantially removing cobalt from the semiconductor substrate.
 14. The method of claim 12, wherein the composition has a cobalt etch rate of at most 0.8 Angstroms/minute based on materials compatibility evaluation of a blanket cobalt on a silicon substrate at 65° C. for 4 minutes.
 15. The method of claim 8, wherein the at least two nitrogen groups comprise a primary amino group and a secondary amino group.
 16. A method, comprising: contacting a semiconductor substrate containing post etch residues or post ash residues with a cleaning composition, the composition comprising: hydroxylamine in an amount of from about 0.5% to about 20% by weight of the composition; a chelating agent comprising two nitrogen-containing groups and a hydroxyl group, the chelating agent being in an amount of from about 0.01% to about 1% by weight of the composition; an alkylene glycol; and water; wherein the pH of the composition is from about 7.5 to about 11 and the semiconductor substrate comprises an interconnect feature containing cobalt.
 17. The method of claim 16, wherein the hydroxylamine is in an amount of from about 5% to about 15% by weight of the composition.
 18. The method of claim 16, wherein the alkylene glycol is in an amount of from about 1% to about 30% by weight of the composition.
 19. The method of claim 16, further comprising a metal corrosion inhibitor, wherein the metal corrosion inhibitor comprises a substituted or unsubstituted benzotriazole and is in an amount of from about 0.2% to about 1% by weight of the composition.
 20. The method of claim 16, wherein the composition is configured to remove residues from a semiconductor substrate, and the semiconductor substrate comprises interconnect features containing cobalt.
 21. The method of claim 20, wherein the composition is configured to remove residues from a semiconductor substrate without substantially removing cobalt from the semiconductor substrate.
 22. The method of claim 16, wherein the composition has a cobalt etch rate of at most 0.8 Angstroms/minute based on materials compatibility evaluation of a blanket cobalt on a silicon substrate at 65° C. for 4 minutes.
 23. The method of claim 16, wherein the at least two nitrogen groups comprise a primary amino group and a secondary amino group.
 24. A method, comprising: contacting a semiconductor substrate containing post etch residues or post ash residues with a cleaning composition, the composition comprising: hydroxylamine in an amount of from about 0.5% to about 20% by weight of the composition; a chelating agent comprising at least two nitrogen containing groups, wherein each of the two nitrogen groups, independently, is a primary amino group or a secondary amino group, and the chelating agent is in an amount of from about 0.01% to about 1.8% by weight of the composition; an alkylene glycol; a metal corrosion inhibitor; and water; wherein the composition has a pH of from about 7.5 to about 11 and the semiconductor substrate comprises an interconnect feature containing cobalt.
 25. The method of claim 24, wherein the hydroxylamine is in an amount of from about 5% to about 15% by weight of the composition.
 26. The method of claim 24, wherein the chelating agent is in an amount of from about 0.01% to about 1% by weight of the composition.
 27. The method of claim 24, wherein the alkylene glycol is in an amount of from about 1% to about 30% by weight of the composition.
 28. The method of claim 24, wherein the metal corrosion inhibitor comprises a substituted or unsubstituted benzotriazole.
 29. The method of claim 24, wherein the metal corrosion inhibitor is in an amount of from about 0.2% to about 1% by weight of the composition.
 30. The method of claim 24, wherein the at least two nitrogen groups comprise a primary amino group and a secondary amino group. 